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| 2MBI150U2A-060 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 600V / 150A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 600 20 150 300 150 300 500 +150 -40 to +125 2500 3.5 3.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5 or M5), Terminal 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=300V IC=150A VGE=15V RG= 24 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 6.2 6.7 - 2.05 - 2.30 - 1.80 - 2.05 - 12 - 0.40 - 0.22 - 0.16 - 0.48 - 0.07 - 1.80 - 1.85 - 1.60 - 1.65 - - - 1.39 Unit Max. 1.0 200 7.7 2.35 - - - - 1.20 0.60 - 1.20 0.45 2.20 - - - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=150A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.25 0.46 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI150U2A-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 400 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 400 VGE=20V15V Collector current : Ic [A] 12V 10V 200 Collector current : Ic [A] 300 VGE=20V 300 15V 12V 10V 200 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Collector current : Ic [A] 300 8 200 Tj=25C Tj=125C 6 4 Ic=300A Ic=150A Ic= 75A 100 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] Dynamic Gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C 10.0 Cies VGE Cres 1.0 Coes VCE 0 200 400 600 800 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI150U2A-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=125C 1000 toff ton tr tf 1000 ton toff tr 100 100 tf 10 0 100 200 300 Collector current : Ic [ A ] 10 0 100 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 12 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 Eoff(125C) Eon(125C) Eoff(25C) 8 Eon(25C) 1000 ton toff 100 tf tr 4 Err(125C) Err(25C) 0 0 100 200 300 10 1.0 10.0 Gate resistance : Rg [ ] 100.0 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 125C 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 24 ,Tj <= 125C 10 Collector current : Ic [ A ] 10.0 100.0 15 300 200 Eoff 5 Eon Err 0 1.0 Gate resistance : Rg [ ] 100 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] 2MBI150U2A-060 Forward current vs. Forward on voltage (typ.) chip 400 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=24 Forward current : IF [ A ] 300 T j=25 C T j=125C 200 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr (125C) trr (25C) 100 Irr (125C) Irr (25C) 100 0 0 1 2 3 Forward on voltage : VF [ V ] 10 0 100 200 300 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 FWD Thermal resistanse : Rth(j-c) [ C /W ] IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M232 |
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